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Product Detailed Parameters
- Description：MOSFET N-CH 100V 40A PWRDI5060-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：28mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2245 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMNH10H028SPSQ-13 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage (BVDSS) of 100V and a maximum continuous drain current (ID) of 40A at TC = +25°C. The device exhibits a static drain-source on-resistance (RDS(ON)) of 28mΩ max at VGS = 10V and ID = 20A. It supports an operating junction temperature range of -55°C to +175°C and is qualified to AEC-Q101 standards for automotive applications.
Feature Summary
- Rated for operation up to +175°C junction temperature, suitable for high ambient temperature environments
- Features 100% unclamped inductive switching (UIS) capability for robust end-application reliability
- Utilizes a thermally efficient PowerDI5060-8 package with a profile under 1.1mm for thin applications
- Manufactured in IATF 16949 certified facilities with PPAP capability for specific automotive change control requirements
Applications
- Engine management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the complete part number including the -13 suffix to confirm tape and reel packaging quantities. Confirm that the design meets AEC-Q101 qualification requirements if intended for automotive use. Ensure thermal management aligns with the specified RθJA values for the target PCB copper area. Validate component compliance with RoHS and halogen-free directives prior to integration.
Selection Notes
Select this component when a 100V N-channel MOSFET with low on-resistance is required for space-constrained designs. The PowerDI5060-8 package offers a compact footprint while maintaining high thermal performance. Consider the 175°C rating for harsh environment deployments. Verify gate drive compatibility with the specified threshold voltage characteristics for optimal switching efficiency.
Part Context
This device belongs to Diodes Incorporated's DMNH series of automotive-grade MOSFETs. It is designed specifically to meet stringent automotive industry standards, including AEC-Q101 qualification and PPAP support. The series targets high-reliability applications requiring robust switching performance and thermal stability in compact surface-mount packages.
Replacement Considerations
Consult official manufacturer substitution guides or datasheets for verified equivalent parts. Cross-reference pin configurations, electrical ratings, and package dimensions before implementation. Do not assume functional interchangeability without validating specific application constraints against the alternative component specifications.
