DMNH10H028SPSW-13

$0.46

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:ae2879503d4a Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：28mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2245 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：1.6W
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMNH10H028SPSW-13

Overview

The DMNH10H028SPSW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 100V drain-source breakdown voltage and a maximum continuous drain current of 40A at 25°C case temperature. The device exhibits a typical static drain-source on-resistance of 19mΩ (maximum 28mΩ) at VGS=10V and ID=20A. It operates within a junction temperature range of -55°C to +175°C and utilizes the PowerDI5060-8/SWP package.

Feature Summary

Rated for operation up to +175°C junction temperature, suitable for high ambient environments.
Features wettable flank terminals to facilitate improved optical inspection during assembly.
Designed with low input capacitance and fast switching speed for high-efficiency power management.
Qualified to JEDEC standards for high reliability applications.

Applications

Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel carrier configuration. Confirm that the standard commercial version matches the design requirements, noting that an automotive-compliant variant exists under a separate datasheet designation. Ensure the selected component meets all applicable RoHS and halogen-free environmental directives required for the target market.

Selection Notes

Select this component when a 100V rating and low on-state resistance are required in a thin profile package. The PowerDI5060-8 form factor supports high thermal efficiency and is designed for applications requiring robust performance under high ambient temperatures. Consider the specific gate charge and capacitance values for driving circuit compatibility.

Part Context

This part belongs to the DMNH series of N-channel MOSFETs from Diodes Incorporated. It is distinct from other series members by its specific combination of 100V voltage rating and 28mΩ on-resistance within the PowerDI5060-8 package. The product line emphasizes high conversion efficiency and thermal management capabilities.

Replacement Considerations

An automotive-compliant alternative is available as DMNH10H028SPSWQ. Verify if the standard commercial qualification level is sufficient or if AEC-Q compliance is mandatory for the end application.

FAQ

Is the device qualified for automotive applications?

The standard DMNH10H028SPSW is not explicitly stated as automotive-qualified in this datasheet. An automotive-compliant version, DMNH10H028SPSWQ, is available under a separate datasheet.