DMNH3010LK3-13

$0.27

Description：MOSFET N-CH 30V 15A/55A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:5930cf8e632e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 15A/55A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：15A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：9.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：37 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2075 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMNH3010LK3-13

Overview

The DMNH3010LK3-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TO252 (DPAK) case with a maximum drain-source voltage of 30V and a continuous drain current rating of 55A at TC = +25°C. The device exhibits a low on-resistance of 9.5mΩ at VGS = 10V and 11.5mΩ at VGS = 4.5V. It supports an operating junction temperature range from -55°C to +175°C, ensuring reliability in high ambient environments.

Feature Summary

Rated for operation up to +175°C junction temperature
Qualified to AEC-Q101 automotive standards
100% unclamped inductive switching (UIS) tested
Lead-free finish and RoHS compliant

Applications

Backlighting circuits
DC-DC converters
Power management functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets all applicable RoHS directives and halogen-free requirements specified for this product line before finalizing procurement specifications.

Selection Notes

Select this component for applications requiring robust performance in elevated thermal conditions due to its +175°C rating. Ensure the gate drive voltage aligns with the specified thresholds for optimal on-resistance characteristics. Verify that the package thermal resistance values match the intended PCB copper layout and heat dissipation strategy.

Part Context

This part belongs to the DMNH series of N-channel enhancement mode MOSFETs designed for high-efficiency power management. It utilizes a TO252 (DPAK) plastic molded case with a matte tin finish over a copper leadframe. The device is classified as a 'Green' product, being free of halogens and antimony.

Replacement Considerations

Consult official substitution lists or equivalent product guides from Diodes Incorporated for verified alternatives. Do not substitute based solely on generic electrical parameters without confirming pinout compatibility and thermal ratings.