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Product Detailed Parameters
- Description：MOSFET N-CH 40V 150A TO220AB
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：48 nC @ 10 V
- Vgs (Max)：20V
- Input Capacitance (Ciss) (Max) @ Vds：2846 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：165W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The DMNH4005SCT is a 40V N-channel enhancement mode MOSFET in a TO-220AB package. It features a maximum continuous drain current of 150A at +25°C and a typical on-resistance of 4.0mΩ at VGS=10V. The device supports a junction temperature range from -55°C to +175°C, with a power dissipation of 165W at +25°C case temperature. Key electrical parameters include a gate threshold voltage of 1V to 3V, total gate charge of 48nC at VGS=10V, and a thermal resistance from junction to case of 0.9°C/W.
Feature Summary
- Designed to minimize on-resistance while maintaining superior switching performance for high-efficiency applications.
- Qualified to JEDEC standards for high reliability.
- Features low input capacitance and low input/output leakage currents.
- Manufactured as a lead-free, halogen-free, and antimony-free green device.
Applications
- Motor controls
- Backlighting
- DC-DC converters
- Power-management functions
Procurement Notes
Verify the specific ordering suffix 'SCT' against official Diodes Incorporated documentation to confirm tube packing quantities and carrier specifications. Ensure that the selected component matches the required thermal and electrical ratings for the intended application environment. Cross-reference datasheet revision numbers to guarantee accurate parameter values during procurement.
Selection Notes
Select this component when a robust through-hole N-channel MOSFET is required for high-current switching applications. Evaluate the 4.0mΩ on-resistance and 150A current capability against circuit load requirements. Consider the TO-220AB package dimensions and thermal characteristics for appropriate heatsinking solutions within the design constraints.
Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology optimized for low on-resistance and fast switching speeds. The product line targets general-purpose power management and motor control applications requiring reliable performance under varying thermal conditions.
Replacement Considerations
An automotive-compliant version is available under the separate part number DMNH4005SCTQ. Verify pinout compatibility and thermal resistance specifications before substituting with other 40V N-channel MOSFETs in the TO-220AB package.
FAQ
What is the maximum pulsed drain current rating?
The maximum pulsed drain current (IDM) is rated at 600A, based on a 10μs pulse duration and a 1% duty cycle.
Is this component qualified for automotive applications?
The standard DMNH4005SCT is not explicitly designated as automotive-grade; however, an automotive-compliant variant is available under the separate part number DMNH4005SCTQ.
