DMNH4005SPSWQ-13

$0.43

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:6341850dc9dd Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：48 nC @ 10 V
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：2847 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：1.6W
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMNH4005SPSWQ-13

Overview

The DMNH4005SPSWQ-13 is a 40V N-channel MOSFET in a PowerDI5060-8 package. It features a maximum drain-source voltage of 40V and a continuous drain current of 80A at TC=25°C. The on-resistance is 4.0mΩ max at VGS=10V and ID=20A. Gate threshold voltage ranges from 1V to 3V. Total gate charge is 48nC at VGS=10V. Operating temperature spans -55°C to +175°C.

Feature Summary

Rated for operation up to +175°C junction temperature, suitable for high ambient environments.
Qualified to AEC-Q101 standards with PPAP capability for automotive applications.
Features 100% unclamped inductive switching testing for robust end-application reliability.
Low RDS(ON) minimizes power losses while low Qg reduces switching losses.

Applications

Engine management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit reel packaging configuration. Confirm that the component meets RoHS, Halogen-free, and Antimony-free requirements as defined by the manufacturer's quality definitions. Ensure the application environment supports the specified thermal characteristics and operating temperature range.

Selection Notes

Select this component for automotive designs requiring high thermal stability and low conduction losses. The PowerDI5060-8 package offers a profile under 1.1mm, ideal for thin applications. Verify that the system voltage does not exceed the 40V drain-source rating and that gate drive levels are sufficient to achieve the minimum on-resistance specifications.

Part Context

This device belongs to Diodes Incorporated's automotive-grade MOSFET portfolio. It is manufactured in IATF 16949 certified facilities. The part utilizes a molded plastic green molding compound with UL flammability classification 94V-0. Terminals are finished with matte tin annealed over a copper leadframe.

Replacement Considerations

Consult official documentation for verified substitutes. Cross-referencing requires matching voltage, current, resistance, and package specifications.