DMNH4006SK3-13

$1.78

Description：MOSFET N-CH 40V 18A/90A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:5ae9d09027fa Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 18A/90A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：18A (Ta), 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：6mOhm @ 86A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：51 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2280 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2.2W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMNH4006SK3-13

Overview

The DMNH4006SK3-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 40V and a static drain-source on-resistance of 6mΩ at VGS=10V and ID=86A. The device supports a continuous drain current of 20A at TA=+25°C and up to 140A at TC=+25°C. Total power dissipation is rated at 2.2W at TA=+25°C, with a junction-to-case thermal resistance of 0.8°C/W. Operating temperature ranges from -55°C to +175°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
Qualified to AEC-Q101 standards for high reliability in automotive environments.
Features low input capacitance and low gate charge characteristics.

Applications

Engine Management Systems
Body Control Electronics
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2,500 units per reel. Confirm that the component meets RoHS compliance requirements and is halogen-free. Ensure the procurement channel provides valid traceability documentation for this advanced information product.

Selection Notes

Select this component when a 40V N-channel MOSFET with low on-resistance is required for automotive or industrial power circuits. Consider the TO-252 (DPAK) package constraints and the 175°C maximum junction temperature rating. Evaluate thermal management needs based on the specified power dissipation limits under ambient and case temperature conditions.

Part Context

This part belongs to the DMNH4006 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The 'SK3' designation indicates the specific TO-252 (DPAK) surface-mount package variant. The '-13' suffix denotes the standard tape and reel packaging format used for automated assembly processes.

Replacement Considerations

The datasheet notes that an automotive-compliant version is available under the separate part number DMNH4006SK3Q. Verify if the Q-suffix variant offers identical electrical specifications or additional qualification requirements before substitution.