DMNH4006SK3Q-13

$1.18

Description：MOSFET N-CH 40V 20A/140A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:305d4bd8795c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 20A/140A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：20A (Ta), 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：6mOhm @ 86A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：51 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2280 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2.2W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMNH4006SK3Q-13

Overview

The DMNH4006SK3Q-13 is a surface-mount N-channel enhancement mode MOSFET designed for automotive applications. It features a 40V drain-source voltage rating and operates up to a +175°C junction temperature. The device delivers a maximum on-resistance of 6mΩ at VGS=10V and ID=86A, with a continuous drain current of 20A at TA=+25°C and 140A at TC=+25°C. Total gate charge is 51nC at VGS=10V. Packaged in a TO-252 (DPAK) housing, it meets AEC-Q101 standards.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Features 100% unclamped inductive switching capability for robust end applications
Low gate charge minimizes switching losses during operation
Low on-resistance reduces power dissipation in the on-state

Applications

Engine management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2,500 units as documented in the manufacturer's ordering information. Confirm that the component meets PPAP requirements if your application demands specific change control protocols mandated by automotive quality standards.

Selection Notes

Select this component when an N-channel MOSFET requires a 40V breakdown voltage and high thermal resilience up to 175°C. Ensure the design accommodates the specified 6mΩ on-resistance at a 10V gate drive level. Verify that the TO-252 package footprint aligns with the PCB layout constraints and that the thermal resistance characteristics meet the system's heat dissipation requirements.

Part Context

This part belongs to the DMNH4006 series from Diodes Incorporated. It is manufactured in IATF 16949 certified facilities and is qualified to AEC-Q101 standards. The device utilizes a molded plastic 'Green' molding compound that is halogen and antimony free, ensuring compliance with environmental directives.

Replacement Considerations

Direct substitutes include other AEC-Q101 qualified 40V N-channel MOSFETs in the TO-252 package with comparable RDS(ON) and thermal ratings. Verify pinout compatibility and ensure the replacement maintains the required 175°C operating temperature range and unclamped inductive switching capabilities.