DMNH4011SPS-13

$0.29

Description：MOSFET N-CH 40V 13A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:c0e7d4067db9 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 13A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：13A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：10mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：25.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1405 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：1.5W (Ta), 100W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMNH4011SPS-13

Overview

The DMNH4011SPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 40V and a gate-source voltage (VGSS) rating of ±20V. The device supports a continuous drain current (ID) of up to 80A at a case temperature of +25°C, with a maximum static drain-source on-resistance (RDS(ON)) of 10mΩ at VGS = 10V and ID = 20A. It operates within a junction temperature range of -55°C to +175°C and utilizes the PowerDI5060-8 surface-mount package.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Features 100% unclamped inductive switching capability for robust end applications
Utilizes a thermally efficient package profile under 1.1mm for thin applications
Qualified to AEC-Q101 standards for automotive reliability

Applications

Engine Management Systems
Body Control Electronics
DCDC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2,500 units per reel. Confirm that the component meets RoHS compliance and is halogen and antimony free as defined by the manufacturer's green product standards. Ensure the application environment does not exceed the specified thermal resistance limits or operating temperature ranges documented in the datasheet.

Selection Notes

Select this component when designing power management circuits requiring low on-state resistance and superior switching performance. The device is suitable for applications demanding high conversion efficiency and reliable operation in high ambient temperatures. Consider the 40V breakdown voltage and 80A current capacity against the specific load requirements of the target system design.

Part Context

This part belongs to the DMNH series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining switching performance. The standard commercial version is distinguished from the automotive-compliant variant, which is available under a separate datasheet designation.

Replacement Considerations

The automotive-compliant part DMNH4011SPSQ is available under a separate datasheet. Verify electrical parameters and package dimensions before substituting with other 40V N-channel MOSFETs in the PowerDI5060-8 package.