DMNH4011SPSQ-13

$0.82

Description：MOSFET N-CH 40V PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4cd8cb9819f3 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：12.9A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：10mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：25.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1405 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 150W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMNH4011SPSQ-13

Overview

The DMNH4011SPSQ-13 is a surface-mount N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a drain-source voltage of 40V and a continuous drain current of 80A at +25°C case temperature. The maximum on-resistance is 10mΩ at VGS=10V and ID=50A. Total gate charge is typically 25.5nC at VDS=20V, ID=50A. Operating junction temperature ranges from -55°C to +175°C.

Feature Summary

Rated for operation up to +175°C junction temperature
100% unclamped inductive switching tested for reliability
Low gate charge minimizes switching losses
Low on-resistance reduces conduction losses

Applications

Engine management systems
DC-DC converters
Body control electronics

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit reel packaging configuration. Confirm that the component meets AEC-Q101 qualification standards and PPAP requirements if intended for automotive manufacturing lines. Ensure the selected part number matches the exact electrical specifications required for the target circuit design.

Selection Notes

Select this component for high-current applications requiring robust thermal performance in elevated ambient temperatures. The low gate charge and on-resistance characteristics make it suitable for efficient power conversion circuits. Verify that the 40V breakdown voltage aligns with the system's maximum operating voltage constraints.

Part Context

This device belongs to Diodes Incorporated's automotive-grade MOSFET portfolio. It is manufactured in IATF 16949 certified facilities and supports specific change control protocols. The PowerDI5060-8 package provides a compact footprint with enhanced thermal dissipation capabilities compared to standard packages.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical pinout configurations and meets or exceeds the original 40V rating and 80A current capacity.