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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 8.6A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：8.6A (Ta)
- Rds On (Max) @ Id, Vgs：15mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1938pF @ 15V
- Power - Max：1.4W, 2W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The DMNH4015SSDQ-13 is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features a 40V drain-source voltage rating and operates up to +175°C junction temperature. The device achieves a maximum on-resistance of 15mΩ at VGS=10V and 20mΩ at VGS=4.5V, supporting continuous drain currents of 8.6A at 25°C and 6.9A at 70°C. Packaged in an SO-8 case with a tape and reel quantity of 2,500 units.
Feature Summary
- Qualified to AEC-Q101 standards for high reliability and PPAP capable
- Rated to +175°C for operation in high ambient temperature environments
- Features low RDS(ON) to minimize power losses and low Qg to reduce switching losses
- Guarantees 100% unclamped inductive switching capability
Applications
- Engine Management Systems
- Body Control
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets all applicable automotive quality standards relevant to your target application environment. Ensure compatibility with existing thermal management designs given the specified operating temperature range.
Selection Notes
Select this component when designing circuits requiring robust performance under high ambient temperatures. Consider its low gate charge characteristics for efficient switching applications. Evaluate the SO-8 package dimensions against available board space constraints during the layout phase.
Part Context
This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio. It utilizes silicon technology within an SO-8 surface mount package. The device is fully RoHS compliant and manufactured without intentionally added lead or halogen compounds.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers before implementation.
FAQ
What is the maximum junction temperature rating?
The device is rated to operate at a maximum junction temperature of +175°C.
Is the component suitable for automotive use?
Yes, it is qualified to AEC-Q101 standards and is PPAP capable.
How does the on-resistance vary with gate voltage?
The maximum on-resistance is 15mΩ at VGS=10V and increases to 20mΩ at VGS=4.5V.
