DMNH4026SSDQ-13

$0.28

Description：MOSFET 2N-CH 7.5A 8SOIC
Series：-

SKU:28d1bd2a08be Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 7.5A 8SOIC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：7.5A (Ta)
Rds On (Max) @ Id, Vgs：24mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1060pF @ 20V
Power - Max：-
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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DMNH4026SSDQ-13

Overview

The DMNH4026SSDQ-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, designed for automotive applications and qualified to AEC-Q101 standards. It features a 40V drain-source voltage rating and operates up to +175°C junction temperature. The device offers a maximum on-resistance of 24mΩ at VGS=10V and 32mΩ at VGS=4.5V, with continuous drain currents of 7.5A at 25°C and 5.3A at 100°C. Packaged in an SO-8 case, it supports low input capacitance and fast switching speeds.

Feature Summary

Rated for high ambient temperature environments with operation up to +175°C
100% unclamped inductive switching tested for robust end applications
Qualified to AEC-Q101 standards with PPAP capability for automotive use

Applications

Motor Control
Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets the necessary AEC-Q101 qualification requirements for your target application. Ensure compatibility with standard surface mount assembly processes for the SO-8 package type.

Selection Notes

Select this component when a dual N-channel MOSFET with automotive reliability is required. Consider its low on-resistance characteristics for efficient power management. Evaluate thermal performance based on the specified junction-to-ambient resistance values for your circuit design constraints.

Part Context

This part belongs to the DMNH series of dual N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. These devices are specifically engineered to meet stringent automotive industry standards, providing reliable performance in demanding electronic systems.