ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 60V 16.5A PWRDI5060
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：16.5A (Ta), 88A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：40.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2597 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
Download product information
Overview
The DMNH6008SPSQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and an on-resistance of 8.0mΩ at VGS=10V. The device supports a continuous drain current of 16.5A at TA=+25°C and operates within a junction temperature range of -55°C to +175°C. Packaged in a PowerDI5060-8 surface-mount format, it includes a total gate charge of 40.1nC and a maximum body diode forward current of 90A.
Feature Summary
- Rated for operation up to +175°C junction temperature
- 100% unclamped inductive switching tested
- Thermally efficient package design
- Low input capacitance with fast switching speed
Applications
- Motor controls
- DC-DC converters
- Power management
Procurement Notes
Verify the component against the official Diodes Incorporated datasheet DS38772 Rev. 3-2. Confirm that the part number suffix matches the specified tape and reel packing quantity. Ensure compliance with RoHS 3 directives and confirm AEC-Q101 qualification status if automotive grade requirements are mandatory for the specific application environment.
Selection Notes
Select this component when high ambient temperature tolerance and robust inductive switching performance are required. The low on-resistance minimizes conduction losses, while the thin profile suits space-constrained designs. Verify thermal resistance values against the specific PCB copper layout and heat dissipation strategy used in the target system.
Part Context
This part belongs to the DMNH series of automotive-grade N-channel MOSFETs from Diodes Incorporated. It is designed to meet stringent automotive reliability standards, supported by PPAP documentation and manufactured in IATF16949 certified facilities. The series utilizes silicon technology optimized for high conversion efficiency and thermal management.
Replacement Considerations
Consult the manufacturer's official cross-reference documentation for verified substitute part numbers. Do not assume functional equivalence based solely on matching electrical parameters such as voltage or current ratings without verifying pinout compatibility and package dimensions.
