DMNH6008SPSW-13

$0.52

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:dd16f51f7c6c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：16.5A (Ta), 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：40.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2597 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.6W
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMNH6008SPSW-13

Overview

The DMNH6008SPSW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a static drain-source on-resistance (RDS(ON)) of 8.0mΩ at VGS = 10V. The device supports a continuous drain current (ID) of 16.5A at TA = +25°C and operates within a junction temperature range of -55°C to +175°C. Packaged in a PowerDI5060-8/SWP format, it is supplied in tape and reel quantities of 2,500 units.

Feature Summary

Rated for operation up to +175°C junction temperature, suitable for high ambient environments
Features wettable flank package design to improve optical inspection reliability
Guaranteed 100% unclamped inductive switching capability for robust end applications
Low input capacitance and fast switching speed for high conversion efficiency

Applications

Notebook battery power management
Load switches
Motor control
DC-DC converters
Power management systems

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the standard 2,500-unit tape and reel packaging configuration. Confirm that the 'SWP' designation indicates the inclusion of wettable flanks, which may affect automated optical inspection requirements during assembly. Ensure compliance with RoHS 3 and halogen-free specifications if required by your manufacturing standards.

Selection Notes

Select this component when a 60V N-channel MOSFET with low on-resistance is required for space-constrained designs. The PowerDI5060-8/SWP package provides a profile under 1.1mm, making it appropriate for thin applications. Consider its thermal resistance characteristics and the necessity for wettable flanks if strict visual inspection protocols are enforced.

Part Context

This part belongs to Diodes Incorporated's DMNH series of N-channel enhancement mode MOSFETs. These devices utilize silicon technology optimized to minimize RDS(ON) while maintaining superior switching performance. The series targets modern portable electronics and power management circuits requiring high reliability and compact footprints.