DMNH6008SPSWQ-13

$0.82

Description：MOSFET BVDSS: 41V~60V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:e7f050ca07de Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：16.5A (Ta), 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：40.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2597 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.6W
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMNH6008SPSWQ-13

Overview

The DMNH6008SPSWQ-13 is a 60V N-channel enhancement mode MOSFET designed for automotive applications. It features an 8.0mΩ maximum on-resistance at VGS=10V and supports a continuous drain current of 16.5A at TA=+25°C. The device operates within a junction temperature range of -55°C to +175°C and utilizes the PowerDI5060-8/SWP package.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive use
Rated for operation up to +175°C junction temperature
Features wettable flank terminals for improved optical inspection
Supports 100% unclamped inductive switching reliability

Applications

Motor controls
DC-DC converters
Power management

Procurement Notes

Verify that the specific part number suffix matches the required packaging configuration, as the datasheet specifies the -13 suffix corresponds to tape and reel quantities. Confirm compliance with RoHS directives and halogen-free requirements during procurement. Ensure the ordering quantity aligns with the manufacturer's standard packing quantity specifications.

Selection Notes

Select this component when high thermal efficiency and low on-state losses are critical for automotive power systems. The device is suitable for environments requiring robust performance under high ambient temperatures. Consider the package profile and thermal resistance characteristics when designing for space-constrained or high-power density applications.

Part Context

This MOSFET belongs to Diodes Incorporated's automotive-grade discrete semiconductor portfolio. It is manufactured in IATF 16949 certified facilities to meet stringent automotive quality standards. The product line focuses on providing reliable switching solutions for demanding electronic control units and power distribution networks.

Replacement Considerations

Consult official substitution lists from Diodes Incorporated for verified alternatives. Cross-reference pin configurations and electrical parameters before replacing existing components in established designs.