DMNH6010SCTB-13

$1.15

Description：MOSFET BVDSS: 41V~60V TO263 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:3c9c3d9eba80 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V TO263 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：133A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：10mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：46 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2692 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：5W (Ta), 375W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263AB (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Download product information

DMNH6010SCTB-13

Overview

The DMNH6010SCTB-13 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDSS) of 60V and a continuous drain current (ID) of 133A at TC = +25°C. The device exhibits a maximum static drain-source on-resistance (RDS(ON)) of 10mΩ at VGS = 10V and ID = 25A. Total gate charge (Qg) is typically 46nC at VDS = 44V, ID = 25A, and VGS = 10V. Thermal resistance from junction to case (RθJC) is 0.4°C/W. Operating temperature range spans -55°C to +175°C.

Feature Summary

Rated for operation up to +175°C junction temperature, suitable for high ambient environments
100% unclamped inductive switching (UIS) tested in production for robustness
Low RDS(ON) minimizes power losses during conduction
Low Qg minimizes switching losses during transitions

Applications

Motor Control
Engine Management Systems
Body Control Electronics
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the reel packaging quantity of 800 units as documented. Confirm that the component meets RoHS compliance and halogen/antimony-free requirements if environmental standards are mandatory for the assembly process. Ensure the TO263AB package dimensions align with the PCB footprint layout before finalizing procurement.

Selection Notes

Select this component when high thermal stability and low conduction losses are required in automotive or industrial power management circuits. The 10mΩ RDS(ON) specification supports efficient current handling up to 133A. Consider the 0.4°C/W junction-to-case thermal resistance for heatsink design calculations. Verify compatibility with standard gate drive voltages of 10V for optimal performance.

Part Context

This part belongs to the DMNH series of 60V N-channel MOSFETs designed for high-efficiency applications. It utilizes a TO263AB (D2PAK) surface-mount package with an exposed drain pad for enhanced thermal dissipation. The device is qualified to JEDEC standards for high reliability and is intended for use in demanding electronic environments requiring robust switching capabilities.

Replacement Considerations

For automotive applications requiring specific change control, AEC-Q100/101/200 qualified parts with a 'Q-suffix' should be consulted. Direct pin-compatible replacements must match the 60V VDSS, 133A ID, and TO263AB package constraints while maintaining similar thermal and electrical characteristics.

FAQ

Is the DMNH6010SCTB-13 qualified for automotive applications?

The part is qualified to JEDEC standards for high reliability. For automotive applications requiring specific change control and AEC-Q qualification, related automotive grade parts with a 'Q-suffix' should be referenced.