DMNH6010SCTBQ-13

$1.08

Description：MOSFET BVDSS: 41V~60V TO263 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:13fac6147c18 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V TO263 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：133A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：10mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：46 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2692 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：5W (Ta), 375W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-263AB (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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DMNH6010SCTBQ-13

Overview

The DMNH6010SCTBQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 60V and a continuous drain current (I_D) of 133A at a case temperature of +25°C. The device exhibits a typical static drain-source on-resistance (R_DS(ON)) of 7.7mΩ at V_GS = 10V and I_D = 25A, with a maximum rating of 10mΩ. It operates within a junction temperature range of -55°C to +175°C and utilizes a TO263AB (D2PAK) surface-mount package.

Feature Summary

Qualified to AEC-Q101 standards and supported by PPAP for automotive applications.
Rated for operation in high ambient temperature environments up to +175°C.
Manufactured in IATF 16949 certified facilities to meet specific automotive change control requirements.
Undergoes 100% unclamped inductive switching (UIS) testing during production.

Applications

Motor Control
Engine Management Systems
Body Control Electronics
DC-DC Converters

Procurement Notes

Verify the complete part number includes the -13 suffix for reel packaging containing 800 units per carrier. Confirm that the component meets AEC-Q101 qualification and PPAP requirements if used in automotive designs. Ensure sourcing from authorized channels to guarantee compliance with IATF 16949 manufacturing standards and valid RoHS compliance documentation.

Selection Notes

Select this component when designing circuits requiring robust performance in high-temperature automotive environments. The low on-resistance minimizes conduction losses, while the low gate charge reduces switching energy. Verify that the thermal management design accommodates the specified thermal resistance values for both junction-to-ambient and junction-to-case configurations under expected load conditions.

Part Context

This device belongs to the DMNH series of N-channel MOSFETs designed specifically for demanding automotive electronic systems. It integrates high-current handling capabilities with advanced reliability testing protocols. The product line emphasizes durability through rigorous UIS validation and strict adherence to automotive quality management system certifications.