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Product Detailed Parameters
- Description：MOSFET N-CH 60V 50A PWRDI5060-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：11mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：35.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1926 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMNH6012SPSQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and a maximum continuous drain current of 50A at 25°C case temperature. The device exhibits a low on-resistance of 11mΩ at VGS=10V and ID=50A, with a gate threshold voltage ranging from 2V to 4V. Total gate charge is specified as 16.3nC at VGS=4.5V and 35.2nC at VGS=10V. It operates within a junction temperature range of -55°C to +175°C and utilizes the PowerDI5060-8 surface-mount package.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Features 100% unclamped inductive switching capability for robust end applications
- Low RDS(ON) minimizes power losses during conduction
- Low QG minimizes switching losses during operation
Applications
- DC motor controls
- Solenoid driving
- Power-management functions
Procurement Notes
Verify that the specific part number matches the required automotive qualification standards, specifically AEC-Q101 compliance and PPAP capability. Confirm the package type is PowerDI5060-8 and ensure the ordering suffix corresponds to the Tape & Reel packing quantity of 2,500 units. Cross-reference the manufacturer's datasheet revision to confirm electrical characteristics align with your design requirements before finalizing procurement.
Selection Notes
Select this component when designing circuits requiring a 60V N-channel MOSFET capable of handling 50A continuous current in compact form factors. The low thermal resistance and thin profile make it suitable for space-constrained automotive designs. Ensure the gate drive voltage supports the specified RDS(ON) performance at either 4.5V or 10V depending on the system architecture and efficiency targets.
Part Context
This component belongs to the DMNH series of automotive-grade MOSFETs produced by Diodes Incorporated. These devices are designed to meet stringent automotive reliability standards and are manufactured in IATF 16949 certified facilities. The series offers various configurations optimized for different current and voltage requirements in automotive power management applications.
Replacement Considerations
Consult official manufacturer substitution guides for verified alternatives. Do not assume pin-compatible replacements without verifying electrical parameters and package dimensions against the original specifications.
