ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET BVDSS: 41V~60V POWERDI506
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：11mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：35.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1926 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.6W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
Download product information
Overview
The DMNH6012SPSWQ is a single N-channel enhancement mode MOSFET designed for automotive applications. It features a 60V drain-source voltage rating and operates up to +175°C junction temperature. The device offers a maximum on-resistance of 11mΩ at VGS=10V and supports a continuous drain current of 50A at TC=+25°C. Packaged in a PowerDI5060-8/SWP (Type UX) footprint with wettable flanks, it meets AEC-Q101 standards and PPAP requirements.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Features 100% unclamped inductive switching capability for robust end applications
- Includes wettable flank terminals to improve optical inspection reliability
Applications
- DC motor controls
- Solenoid driving
- Power-management functions
Procurement Notes
Verify the specific ordering suffix matches the required packing quantity and carrier type. Confirm that the component meets the necessary AEC-Q101 qualification and PPAP documentation requirements for your specific automotive application context before finalizing procurement.
Selection Notes
Select this component when designing circuits requiring low thermal resistance and high current handling within a thin profile package. Ensure gate drive voltages align with the specified threshold characteristics and verify PCB layout compatibility with the PowerDI5060-8/SWP pad dimensions.
Part Context
This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio, specifically engineered for high-reliability environments. It utilizes silicon technology housed in a lead-free, halogen-free molded plastic package compliant with RoHS directives and IATF 16949 manufacturing standards.
Replacement Considerations
Consult official substitution lists or datasheets for compatible parts within the DMNH series. Verify pinout compatibility and electrical parameter margins before substituting.
