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The DMNH6021SPD-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 (Type C) package. It features a drain-source voltage of 60V and operates up to +175°C. At VGS=10V and ID=15A, the maximum on-resistance is 25mΩ; at VGS=4.5V and ID=12A, it is 40mΩ. Continuous drain current reaches 8.2A at TA=+25°C and 32A at TC=+25°C. The device has a gate threshold voltage of 1V to 3V, total gate charge of 20.1nC, and input capacitance of 1,143pF.
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging format. Confirm that the standard DMNH6021SPD datasheet aligns with your design requirements, noting that an automotive-compliant variant exists under the separate DMNH6021SPDQ designation if stricter automotive qualification documentation is required.
Select this component when a dual N-channel topology is needed within a low-profile surface-mount footprint. The 60V rating and low RDS(ON) make it appropriate for efficient power switching. Ensure the PCB layout accommodates the exposed drain pad for optimal thermal dissipation, as the package relies heavily on board copper for heat transfer.
This part belongs to Diodes Incorporated's DMNH series of dual MOSFETs designed for high-efficiency applications. It utilizes the PowerDI® trademarked plastic package technology, which offers superior thermal performance compared to traditional leaded packages while maintaining a small physical profile suitable for modern consumer and industrial electronics.
For automotive-specific requirements, consider the DMNH6021SPDQ. Verify pinout compatibility and thermal resistance characteristics against alternative dual N-channel MOSFETs in the PowerDI5060-8 package before substitution.
The standard DMNH6021SPD is qualified to AEC-Q101 standards. However, Diodes Incorporated offers a specific automotive-compliant part number, DMNH6021SPDQ, documented under a separate datasheet.
The device is rated for a junction temperature range of -55°C to +175°C.
The maximum RDS(ON) is specified as 25mΩ at VGS=10V and 40mΩ at VGS=4.5V, indicating lower resistance at higher gate drive voltages.