DMNH6021SPD-13

DMNH6021SPD-13

$0.43
  • Description:MOSFET 2N-CH 60V 8.2A PWRDI50
  • Series:-

SKU:a0e8c53e87f3 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 8.2A PWRDI50
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:8.2A, 32A
  • Rds On (Max) @ Id, Vgs:25mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:20.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:1143pF @ 25V
  • Power - Max:1.5W
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:PowerDI5060-8
  • Grade:Automotive
  • Qualification:AEC-Q101

Download product information

DMNH6021SPD-13

Overview

The DMNH6021SPD-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 (Type C) package. It features a drain-source voltage of 60V and operates up to +175°C. At VGS=10V and ID=15A, the maximum on-resistance is 25mΩ; at VGS=4.5V and ID=12A, it is 40mΩ. Continuous drain current reaches 8.2A at TA=+25°C and 32A at TC=+25°C. The device has a gate threshold voltage of 1V to 3V, total gate charge of 20.1nC, and input capacitance of 1,143pF.

Feature Summary

  • Dual N-channel configuration integrated into a single compact PowerDI5060-8 case for space-constrained designs.
  • Rated for operation up to +175°C junction temperature, suitable for high ambient thermal environments.
  • 100% unclamped inductive switching capability ensures robust performance under inductive load conditions.
  • Qualified to AEC-Q101 standards for automotive-grade reliability.

Applications

  • Backlighting circuits
  • Power management functions
  • DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging format. Confirm that the standard DMNH6021SPD datasheet aligns with your design requirements, noting that an automotive-compliant variant exists under the separate DMNH6021SPDQ designation if stricter automotive qualification documentation is required.

Selection Notes

Select this component when a dual N-channel topology is needed within a low-profile surface-mount footprint. The 60V rating and low RDS(ON) make it appropriate for efficient power switching. Ensure the PCB layout accommodates the exposed drain pad for optimal thermal dissipation, as the package relies heavily on board copper for heat transfer.

Part Context

This part belongs to Diodes Incorporated's DMNH series of dual MOSFETs designed for high-efficiency applications. It utilizes the PowerDI® trademarked plastic package technology, which offers superior thermal performance compared to traditional leaded packages while maintaining a small physical profile suitable for modern consumer and industrial electronics.

Replacement Considerations

For automotive-specific requirements, consider the DMNH6021SPDQ. Verify pinout compatibility and thermal resistance characteristics against alternative dual N-channel MOSFETs in the PowerDI5060-8 package before substitution.

FAQ

Is the DMNH6021SPD-13 qualified for automotive applications?

The standard DMNH6021SPD is qualified to AEC-Q101 standards. However, Diodes Incorporated offers a specific automotive-compliant part number, DMNH6021SPDQ, documented under a separate datasheet.

What is the maximum operating temperature for this device?

The device is rated for a junction temperature range of -55°C to +175°C.

How does the on-resistance vary with gate voltage?

The maximum RDS(ON) is specified as 25mΩ at VGS=10V and 40mΩ at VGS=4.5V, indicating lower resistance at higher gate drive voltages.

DMNH6021SPD-13DMNH6021SPD-13
$0.43
Buy Now