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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 8.2A PWRDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：8.2A (Ta), 32A(Tc)
- Rds On (Max) @ Id, Vgs：25mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1143pF @ 25V
- Power - Max：1.5W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount, Wettable Flank
- Package / Case：8-PowerTDFN
- Supplier Device Package：PowerDI5060-8 (Type R)
- Grade：-
- Qualification：-
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Overview
The DMNH6021SPDW-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage (V_DSS) of 60V and operates within a junction temperature range of -55°C to +175°C. The device provides a maximum continuous drain current (I_D) of 32A at TC = +25°C. Static drain-source on-resistance (R_DS(ON)) is rated at a maximum of 25mΩ at V_GS = 10V and 40mΩ at V_GS = 4.5V. Total gate charge (Q_g) is typically 20.1nC at V_GS = 10V.
Feature Summary
- Rated for operation up to +175°C, suitable for high ambient temperature environments
- Features wettable flank terminals to facilitate improved optical inspections
- Guarantees 100% unclamped inductive switching capability for robust end applications
- Totally lead-free, fully RoHS compliant, and halogen and antimony free
Applications
- Backlighting circuits
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging configuration. Confirm that the component meets the required environmental standards, specifically the RoHS directive and halogen/antimony-free definitions. Ensure the selected variant matches the standard datasheet specifications rather than the automotive-compliant version, which is documented separately.
Selection Notes
Select this component when a dual N-channel MOSFET with low on-state resistance is required for high-efficiency power management. The PowerDI5060-8 package offers a compact footprint with an exposed drain pad for thermal dissipation. Consider the +175°C rating if the application involves elevated ambient temperatures or requires extended thermal margins beyond standard industrial limits.
Part Context
This part belongs to the DMNH6021 series of dual N-channel MOSFETs designed by Diodes Incorporated. It utilizes the PowerDI5060-8 surface-mount package, which integrates an exposed copper leadframe for enhanced thermal performance. The device is engineered to minimize conduction losses while maintaining fast switching speeds, positioning it as a solution for modern, space-constrained power electronics designs.
Replacement Considerations
An automotive-compliant alternative is available under the separate datasheet designation DMNH6021SPDWQ. Verify if the specific reliability requirements of the target application necessitate the automotive-grade qualification associated with the 'Q' suffix variant.
