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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 8.2A PWRDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：8.2A (Ta), 32A(Tc)
- Rds On (Max) @ Id, Vgs：25mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1143pF @ 25V
- Power - Max：1.5W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount, Wettable Flank
- Package / Case：8-PowerTDFN
- Supplier Device Package：PowerDI5060-8 (Type R)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMNH6021SPDWQ-13 is a dual N-channel enhancement mode MOSFET rated for 60V drain-source voltage and operating temperatures up to +175°C. It features a maximum on-resistance of 25mΩ at VGS=10V and 40mΩ at VGS=4.5V, supporting continuous currents of 32A and 25A respectively at TC=+25°C. The device utilizes a PowerDI5060-8 package with wettable flanks, ensuring high reliability through 100% UIS testing and AEC-Q101 qualification.
Feature Summary
- Dual N-channel configuration integrated into a single compact PowerDI5060-8 package
- Qualified to AEC-Q101 automotive standards with PPAP capability for IATF 16949 manufacturing
- Rated for +175°C junction temperature operation in high ambient environments
- Features wettable flank technology to enable improved optical inspection of solder joints
Applications
- Automotive backlighting circuits
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific suffix (e.g., -13) against the datasheet ordering information to confirm packing quantity and carrier type. Ensure the component meets AEC-Q101 requirements if used in automotive contexts. Confirm that the manufacturer's quality definitions regarding halogen-free and lead-free status align with project specifications before finalizing procurement.
Selection Notes
Select this component when space constraints require dual switches within a single footprint. It is suitable for applications demanding robust performance under high thermal stress due to its +175°C rating. Consider the low gate charge and fast switching speeds for efficiency-critical designs. Verify that the required drive voltage supports the specified RDS(ON) thresholds for optimal conduction losses.
Part Context
This part belongs to Diodes Incorporated's DMNH series of automotive-grade MOSFETs designed for high-reliability applications. It shares the PowerDI5060-8 form factor with other devices in the family but offers distinct dual-channel integration. The Q suffix indicates AEC-Q101 qualification, differentiating it from standard commercial variants.
Replacement Considerations
Direct pin-compatible replacements include the DMNH6021SPD-13. When substituting, verify that the alternative maintains the same PowerDI5060-8 package dimensions and electrical characteristics, particularly the 60V breakdown voltage and current ratings.
