DMNH6021SPS-13

$0.24

Description：MOSFET N-CH 60V 55A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:602738eedf34 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 55A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：23mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：19.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1016 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.6W (Ta), 53W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMNH6021SPS-13

Overview

The DMNH6021SPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +175°C. The device provides a maximum continuous drain current of 55A at a case temperature of +25°C. Static drain-source on-resistance is rated at a maximum of 23mΩ at VGS=10V and 28mΩ at VGS=4.5V, both tested at ID=12A. Total gate charge is specified as 19.7nC at VGS=10V. The component utilizes a PowerDI5060-8 surface-mount package.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Features 100% unclamped inductive switching capability for robust end applications
Designed to minimize on-state resistance while maintaining superior switching performance

Applications

Driving solenoids
Driving relays
Power-management functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel packing quantity of 2,500 units. Confirm that the PowerDI5060-8 package variant matches the intended PCB footprint requirements. Ensure compliance with RoHS directives and halogen-free specifications if mandated by the target application standards.

Selection Notes

Select this component when a 60V N-channel MOSFET is required for high-efficiency power management. The low on-resistance minimizes conduction losses, while the fast switching speed supports efficient operation. Consider the thermal characteristics and package size relative to the available board space and heat dissipation capabilities of the design.

Part Context

This part belongs to the DMNH series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered for high conversion efficiency and are housed in the compact PowerDI5060-8 package. The series targets applications demanding reliable switching performance under varying thermal conditions.