DMNH6021SPSW-13

$0.29

Description：MOSFET BVDSS: 41V~60V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:c14838bf1a35 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：23mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1132 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.6W
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMNH6021SPSW-13

Overview

The DMNH6021SPSW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source voltage rating and operates within a temperature range of -55°C to +175°C. The device utilizes a PowerDI5060-8 package with wettable flanks for improved optical inspection. Key electrical parameters include a maximum on-resistance of 23mΩ at VGS=10V and 28mΩ at VGS=4.5V, supporting continuous drain currents of 44A at 25°C and 31A at 100°C. Total gate charge is 20.1nC at VGS=10V.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Features wettable flanks to facilitate improved optical inspection during assembly
Designed to minimize on-state resistance while maintaining superior switching performance
Qualified to JEDEC standards for high reliability and tested for unclamped inductive switching

Applications

Backlighting systems
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance requirements and is halogen-free if environmental specifications are mandatory for the target application. Ensure the selected part matches the standard commercial grade rather than the automotive Q-suffix variant unless explicitly required.

Selection Notes

Select this component when low on-state losses and fast switching speeds are critical for power efficiency. The wide operating temperature range makes it suitable for applications exposed to elevated thermal conditions. Verify that the required gate drive voltage aligns with the specified thresholds for optimal conduction characteristics and switching behavior.

Part Context

This MOSFET belongs to the DMNH series from Diodes Incorporated, designed for high-efficiency power management. It is housed in the PowerDI5060-8 surface-mount package, which provides a compact footprint with enhanced thermal dissipation capabilities compared to traditional packages. The device is intended for general-purpose switching applications requiring robust performance.

Replacement Considerations

For automotive applications requiring specific change control or AEC-Q qualification, consult the related automotive grade parts with the Q-suffix. Verify pinout compatibility and thermal resistance values when substituting with other N-channel MOSFETs in the same voltage class.

FAQ

Is the DMNH6021SPSW-13 qualified for automotive applications?

No, this specific part number is not qualified to AEC-Q standards. Automotive applications requiring specific change control should refer to the related automotive grade parts with the Q-suffix.