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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 7.1A/22.6A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：7.1A, 22.6A
- Rds On (Max) @ Id, Vgs：27mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：32nC @ 30V
- Input Capacitance (Ciss) (Max) @ Vds：2127pF @ 25V
- Power - Max：1.5W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMNH6022SSDQ-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, designed for automotive applications. It features a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 22.6A at TC = +25°C. The maximum on-resistance (RDS(ON)) is 27mΩ at VGS = 10V and 30mΩ at VGS = 6V. Total gate charge (Qg) is 32nC at VGS = 10V. Operating temperature range extends from -55°C to +175°C. Power dissipation is 1.5W at TA = +25°C with standard mounting, or 2.1W with an extended copper plate.
Feature Summary
- Qualified to AEC-Q101 standards for high reliability in automotive environments
- Rated for operation up to +175°C junction temperature
- 100% unclamped inductive switching tested for robustness
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Applications
- Engine Management Systems
- Body Control Electronics
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging configuration containing 2,500 units per reel. Confirm that the component meets PPAP requirements if mandated by your supply chain quality protocols. Ensure the SO-8 package dimensions align with your PCB footprint design guidelines before finalizing procurement orders.
Selection Notes
Select this component when a dual N-channel configuration is required within a compact SO-8 package. It is suitable for designs needing high thermal stability up to +175°C and low conduction losses via its 27mΩ RDS(ON). Consider the 22.6A continuous current rating against your thermal management capabilities, particularly regarding the 1.5W power dissipation limit under standard FR-4 board conditions.
Part Context
This device belongs to Diodes Incorporated's automotive-compliant MOSFET portfolio. It utilizes silicon technology housed in a molded plastic SO-8 case with matte tin annealed terminals over a copper leadframe. The product is classified as Level 1 Moisture Sensitivity per J-STD-020 and carries UL flammability classification rating 94V-0.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters such as VDS, ID, and RDS(ON) when evaluating alternative dual N-channel MOSFETs from other manufacturers.
FAQ
What is the maximum junction temperature for this MOSFET?
The operating and storage temperature range extends up to a maximum junction temperature of +175°C.
Is this component qualified for automotive use?
Yes, it is qualified to AEC-Q101 standards and is PPAP capable for automotive applications.
What is the typical gate threshold voltage?
The gate threshold voltage (VGS(TH)) has a minimum value of 1.0V and a maximum of 3.0V at ID = 250µA.
