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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 33A PWRDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：33A (Tc)
- Rds On (Max) @ Id, Vgs：35mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：879pF @ 25V
- Power - Max：2.4W (Ta), 68W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount, Wettable Flank
- Package / Case：8-PowerTDFN
- Supplier Device Package：PowerDI5060-8 (Type R)
- Grade：-
- Qualification：-
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Overview
The DMNH6035SPDW-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 60V and a continuous drain current of 33A at case temperatures of +25°C. The device offers a maximum on-resistance of 35mΩ at VGS=10V and 44mΩ at VGS=4.5V. Packaged in a PowerDI5060-8 (SWP) Type R surface-mount configuration, it supports an operating junction temperature range from -55°C to +175°C.
Feature Summary
- Dual N-channel configuration designed for high efficiency power management applications
- Wettable flank construction facilitates improved optical inspections during manufacturing
- Qualified for 100% Unclamped Inductive Switching (UIS) testing in production environments
- Lead-free finish with RoHS compliance and halogen/antimony-free green material composition
Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging format. Confirm that the component meets the required environmental standards, including RoHS directives and REACH SVHC regulations. Ensure the selected variant aligns with the intended thermal management strategy given the specified power dissipation limits.
Selection Notes
Select this component when a dual N-channel topology is required within a compact PowerDI footprint. Evaluate the thermal resistance characteristics against the expected ambient temperature conditions. Consider the gate charge parameters for switching frequency requirements and ensure the PCB layout accommodates the exposed drain pad for optimal heat dissipation.
Part Context
This part belongs to the DMNH series of N-channel MOSFETs from Diodes Incorporated. It utilizes the PowerDI5060-8 package, which provides enhanced thermal performance compared to standard plastic packages. The device is designed to minimize on-state resistance while maintaining superior switching capabilities for efficient power conversion.
Replacement Considerations
For automotive applications requiring specific change control or AEC-Q qualification, consider the DMNH6035SPDWQ variant. Verify pin compatibility and electrical specifications before substituting with other dual N-channel MOSFETs in similar packages.
