DMNH6042SK3Q-13

$0.98

Description：MOSFET N-CH 60V 25A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f8df5034d493 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 25A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：50mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：584 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMNH6042SK3Q-13

Overview

The DMNH6042SK3Q-13 is a single N-channel enhancement mode MOSFET rated for a drain-source voltage of 60V. It features a maximum on-resistance of 50mΩ at VGS=10V and 65mΩ at VGS=4.5V, supporting continuous drain currents of 25A at TC=+25°C and 22A at VGS=4.5V. The device operates within a junction temperature range of -55°C to +175°C and utilizes a TO252 (DPAK) package.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Features 100% unclamped inductive switching capability for robust end applications
Designed with low on-resistance and low input capacitance characteristics

Applications

Driving solenoids
Driving relays
Power-management functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2,500 units per reel. Confirm that the component meets AEC-Q101 qualification standards and PPAP requirements necessary for automotive supply chain compliance before finalizing procurement specifications.

Selection Notes

Select this component when an automotive-grade N-channel MOSFET capable of operating at elevated temperatures up to 175°C is required. Ensure the application demands a 60V breakdown voltage and can accommodate the thermal resistance characteristics inherent to the TO252 surface-mount package design.

Part Context

This part belongs to the DMNH6042SK3Q series manufactured by Diodes Incorporated. It is designed specifically to meet stringent automotive industry requirements, supported by PPAP documentation and produced in IATF 16949 certified facilities to ensure consistent quality and reliability.

Replacement Considerations

Consult official manufacturer substitution lists or equivalent circuit datasheets to identify verified replacements. Do not assume functional interchangeability based solely on matching voltage or current ratings without verifying pinout compatibility and thermal performance data.