DMNH6042SSDQ-13

$1.27

Description：MOSFET 2N-CH 60V 16.7A 8SO
Series：-

SKU:2c9e8757fd8f Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 16.7A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：16.7A (Tc)
Rds On (Max) @ Id, Vgs：50mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：584pF @ 25V
Power - Max：2.1W
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：Automotive
Qualification：AEC-Q101

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DMNH6042SSDQ-13

Overview

The DMNH6042SSDQ-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +175°C. The device provides two independent channels in an SO-8 surface-mount package. Key electrical parameters include a maximum on-resistance of 50mΩ at VGS=10V and 65mΩ at VGS=4.5V, with continuous drain currents reaching 16.7A at TC=+25°C. Total gate charge is specified at 8.8nC at VGS=10V.

Feature Summary

Qualified to AEC-Q101 standards for automotive reliability
Rated for operation up to +175°C junction temperature
Supports 100% unclamped inductive switching testing
Compliant with RoHS directives and halogen-free requirements

Applications

Engine management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets the necessary automotive qualification standards if deployed in regulated environments. Ensure thermal design accounts for the specified power dissipation limits under actual operating conditions. Cross-reference datasheet revision numbers to guarantee parameter consistency during procurement.

Selection Notes

Select this component when high ambient temperature tolerance is critical for system longevity. The dual-channel architecture allows for space-efficient designs requiring two independent switches. Evaluate the low gate charge specifications against driver capabilities to optimize switching performance. Consider the SO-8 package dimensions for PCB layout constraints and thermal pad requirements.

Part Context

This part belongs to the DMNH6042 series of dual N-channel MOSFETs designed specifically for automotive applications. It shares core electrical characteristics with other variants in the family but differs in packaging and specific qualification levels. The series emphasizes robustness in harsh environments through extended temperature ratings and reliable switching capabilities.

Replacement Considerations

Consult official manufacturer substitution lists for verified alternatives. Verify pin compatibility and thermal resistance values before integrating substitute components into existing designs.