DMNH6069SFVWQ-13

$0.18

Description：MOSFET BVDSS: 41V~60V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:c1b094a1dd83 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：5A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：50mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：740 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：3W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMNH6069SFVWQ-13

Overview

The DMNH6069SFVWQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source voltage rating and operates within a junction temperature range of -55°C to +175°C. The device utilizes the PowerDI3333-8 package with wettable flanks. Key electrical parameters include a maximum on-resistance of 50mΩ at VGS=10V and 63mΩ at VGS=4.5V, supporting continuous drain currents up to 18A at TC=25°C. It is qualified to AEC-Q101 standards.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Features low RDS(ON) to ensure minimal on-state power losses
Small form factor thermally efficient package enables higher density end products
Includes wettable flanks for improved optical inspection capabilities

Applications

Power-management functions
DC-DC converters
Automotive applications requiring specific change control

Procurement Notes

Verify that the ordering suffix matches the required tape and reel quantity. Confirm the component meets AEC-Q101 qualification requirements and PPAP documentation needs for automotive supply chains. Ensure the specified PowerDI3333-8 package variant aligns with PCB footprint constraints and thermal management designs before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring robust performance in high-temperature automotive environments. Consider the 60V breakdown voltage and low on-resistance characteristics for efficient power switching. Evaluate the thermal resistance values against system heat dissipation requirements. Verify compatibility with standard gate drive voltages for optimal conduction performance.

Part Context

This part belongs to the DMNH series of N-channel MOSFETs from Diodes Incorporated. It is designed specifically for automotive-grade applications requiring stringent quality controls. The device is manufactured in IATF 16949 certified facilities. It represents an evolution in surface-mount technology offering superior thermal efficiency compared to traditional packages.