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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V~60V POWERDI333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：5A (Ta), 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：50mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：740 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMNH6069SFVWQ-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and operates with a continuous drain current of up to 18A at case temperature of +25°C. The device offers a maximum on-resistance of 50mΩ at VGS=10V and 63mΩ at VGS=4.5V. Packaged in a PowerDI3333-8 (SWP) form factor, it supports junction temperatures up to +175°C and includes wettable flank terminals for enhanced inspection.
Feature Summary
- Rated for operation up to +175°C junction temperature, suitable for high ambient environments
- PowerDI3333-8 package occupies only 33% of the board area compared to SO-8 packages
- Features wettable flank terminals to improve optical inspection reliability
- Qualified to AEC-Q101 standards with PPAP capability for automotive applications
Applications
- Automotive power management functions
- DC-DC converters
- High density end products requiring small form factors
Procurement Notes
Verify that the specific ordering suffix matches the required tape and reel quantity. Confirm compliance with RoHS directives and halogen-free requirements if mandated by project specifications. Ensure the design accommodates the thermal characteristics defined for the PowerDI3333-8 package under intended operating conditions.
Selection Notes
Select this component when a compact footprint is critical alongside robust thermal performance. The low on-resistance minimizes conduction losses, while the high temperature rating allows for reliable operation in constrained spaces. Verify gate drive voltage compatibility with the specified RDS(ON) thresholds for optimal efficiency.
Part Context
This part belongs to the DMN series of N-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology within a molded plastic green molding compound case. The product line is designed to meet stringent automotive industry requirements, ensuring quality through IATF 16949 certified manufacturing facilities.
Replacement Considerations
Consult official substitution lists for verified equivalents. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions to ensure functional compatibility without redesigning the PCB layout.
