DMP1011UCB9-7

Overview

The DMP1011UCB9-7 is a P-channel enhancement mode MOSFET utilizing Diodes Incorporated's third-generation LD-MOS technology. It features an ultra-low on-state resistance of 8.2 mΩ and a total gate charge of 8.1 nC, enabling high-efficiency power transfer with minimal switching losses. The device operates with a drain-source voltage rating of -8 V and supports continuous drain currents up to -10 A at +25°C. Packaged in a compact U-WLB1515-9 chip-scale format measuring 1.5 mm × 1.5 mm with a height of 0.60 mm, it provides low thermal impedance for increased power density.

Feature Summary

• LD-MOS Technology: Engineered to minimize on-state losses and achieve ultra-fast switching speeds.
• Chip-Scale Package (CSP): Combines low thermal impedance with minimal RDS(ON) per footprint area to increase power density.
• Low Turn-On Potential: Features a typical gate threshold voltage of -0.8 V for efficient control.
• High Reliability: Qualified to AEC-Q101 standards and includes 6 kV HBM ESD protection for the gate.

Applications

• DC-DC Converters
• Battery Management Systems
• Load Switches

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets RoHS 2/3 compliance and is halogen-free. Ensure the application environment remains within the specified operating temperature range of -55°C to +150°C. Cross-reference the U-WLB1515-9 package dimensions with PCB layout guidelines to ensure proper soldering and thermal performance.

Selection Notes

Select this component for applications requiring high current handling in extremely small footprints. The -8 V rating suits low-voltage systems where standard MOSFETs are too large. The low gate charge facilitates rapid switching in high-frequency converters. Consider the thermal resistance values when designing heat dissipation strategies for dense layouts.

Part Context

This part belongs to Diodes Incorporated's DMP series of lateral MOSFETs. It utilizes the U-WLB1515-9 case style, which is a specialized chip-scale package designed for space-constrained designs. The product represents an advancement in LD-MOS technology aimed at reducing size while maintaining robust electrical performance.

Replacement Considerations

Direct substitutes must match the -8 V rating, P-channel configuration, and U-WLB1515-9 package. Verify equivalent RDS(ON) and Qg values to maintain switching efficiency. Check if alternative packages require different PCB footprints.

FAQ

What is the maximum pulsed drain current?

The maximum pulsed drain current is -50 A, with a pulse duration of 10 μs and a duty cycle of ≤1%.

Is the device suitable for automotive applications?

Yes, the DMP1011UCB9 is qualified to AEC-Q101 standards for high reliability.

What is the typical gate threshold voltage?

The typical gate threshold voltage (VGS(th)) is -0.8 V at TA = +25°C.