DMP1012UFDF-7

$0.60

Description：MOSFET P-CH 12V 12.6A/20A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:1d2e04a3c378 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 12V 12.6A/20A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：12.6A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：15mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id：900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：31 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：1344 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：720mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMP1012UFDF-7

Overview

The DMP1012UFDF-7 is a 12V P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of -12V and a gate-source voltage rating of ±8V. The device offers low on-resistance, with RDS(ON) values ranging from 15mΩ at VGS=-4.5V to 40mΩ at VGS=-1.8V. Continuous drain current reaches -20A at TC=+25°C. It utilizes a U-DFN2020-6 (Type F) package with a 0.6mm profile.

Feature Summary

Ultra-low profile design with a 0.6mm height suitable for space-constrained applications
Minimized on-state resistance combined with fast switching performance
Totally lead-free and fully RoHS compliant construction
Halogen and antimony free "Green" device

Applications

Battery management systems
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets the required environmental standards, specifically the halogen and antimony-free 'Green' classification. Ensure compatibility with the specified U-DFN2020-6 footprint dimensions during PCB layout validation.

Selection Notes

Select this component for designs requiring high efficiency in compact power management circuits. The low thermal resistance and small PCB footprint make it suitable for portable devices. Evaluate the gate drive voltage requirements against the available RDS(ON) characteristics to ensure optimal conduction losses are achieved within the system's operational constraints.

Part Context

This part belongs to the DMP series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The product is intended for high-efficiency power management applications where size and thermal performance are critical design factors.