DMP1045U-7

$0.38

Description：MOSFET P-CH 12V 4A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f2c86076c45f Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 12V 4A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：31mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15.8 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：1357 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：800mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMP1045U-7

Overview

The DMP1045U-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a SOT23 package and operates with a drain-source voltage of -12V. The device provides a maximum continuous drain current of 5.2A at +25°C and exhibits low on-resistance, specified as 31mΩ at VGS = -4.5V and 45mΩ at VGS = -2.5V. Key electrical parameters include a gate threshold voltage ranging from -0.3V to -1.0V, an input capacitance of 1357pF, and a total gate charge of 15.8nC. The component supports an operating temperature range from -55°C to +150°C.

Feature Summary

Low on-resistance design for high-efficiency power management
Fast switching speed with low input capacitance
ESD protected gate structure
Qualified to AEC-Q101 standards for automotive reliability

Applications

DC-DC Converters
Power Management Functions
Analog Switch

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the Tape & Reel packaging format containing 3,000 units per reel. Confirm that the required RoHS compliance aligns with EU Directive 2002/95/EC (RoHS) and subsequent amendments. Ensure the application environment does not exceed the absolute maximum ratings defined in the datasheet, particularly regarding thermal resistance and junction temperature limits during operation.

Selection Notes

Select this component when a compact SOT23 footprint is required for low-voltage P-channel switching applications. The device is suitable for designs prioritizing minimal conduction losses due to its optimized on-resistance characteristics. Consider the thermal performance constraints associated with the small outline package, specifically the junction-to-ambient thermal resistance values provided for different PCB mounting configurations.

Part Context

This part belongs to the DMP1045U series of P-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series is engineered to minimize on-state resistance while maintaining superior switching performance. The manufacturer offers related variants, including an automotive-compliant version designated as DMP1045UQ, which shares similar electrical characteristics but adheres to stricter automotive quality standards.

Replacement Considerations

The DMP1045UQ is an automotive-compliant alternative within the same product family. Verify pinout compatibility and ensure the replacement meets the specific reliability requirements of the target application before substitution.