DMP1045UFY4-7

$0.48

Description：MOSFET P-CH 12V 5.5A DFN2015H4-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:258f51a6d98c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 12V 5.5A DFN2015H4-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：32mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：23.7 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：1291 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：700mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DFN2015H4-3
Package / Case：3-XFDFN

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DMP1045UFY4-7

Overview

The DMP1045UFY4-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of -12V and a continuous drain current of -5.5A at 25°C. The device exhibits a low on-state resistance of 32mΩ at VGS = -4.5V and 45mΩ at VGS = -2.5V. Key electrical parameters include an input capacitance of 1291pF, a total gate charge of 23.7nC at VGS = -8V, and a power dissipation rating of 0.7W at 25°C. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Low on-resistance for high efficiency power management
Fast switching speed with low input/output leakage
ESD protection up to 3kV
Qualified to AEC-Q101 standards for high reliability

Applications

DC-DC converters
Power management functions
Analog switches

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the X2-DFN2015-3 package dimensions align with the target PCB footprint requirements. Ensure compliance with RoHS and halogen-free specifications if required by the end application. Check for any recent product change notices regarding assembly or sourcing sites.

Selection Notes

Select this component when a compact P-channel MOSFET with low RDS(on) is needed for 12V systems. Consider the thermal resistance values based on the intended PCB copper coverage. Evaluate the gate threshold voltage characteristics against the available drive voltage levels in the circuit design. Verify that the package size fits within the spatial constraints of the assembly.

Part Context

This part belongs to the DMP1045 series of P-channel MOSFETs from Diodes Incorporated. It utilizes the X2-DFN2015-3 surface-mount package. The device is designed to minimize on-state resistance while maintaining superior switching performance. It is suitable for applications requiring high efficiency in power management circuits.

Replacement Considerations

The datasheet does not list specific substitute part numbers. Verify parametric equivalence such as voltage ratings, current capabilities, and package dimensions before considering alternative components.