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Product Detailed Parameters
- Description：MOSFET 2P-CH 12V 3.9A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：3.9A
- Rds On (Max) @ Id, Vgs：59mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20.8nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：1028pF @ 6V
- Power - Max：1.36W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：U-DFN2020-6 (Type B)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMP1055UFDB-7 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of -12V and a typical on-resistance (RDS(ON)) of 37mΩ at VGS = -4.5V, with a maximum continuous drain current (ID) of -3.9A at +25°C. The device utilizes a U-DFN2020-6 package with a maximum height of 0.6mm. Total gate charge is typically 13nC at VGS = -4.5V. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Dual P-channel configuration designed for high efficiency power management applications
- Low profile construction with a maximum height of 0.6mm
- ESD protected gate structure integrated within the component
- Totally lead-free and fully RoHS compliant with halogen and antimony free materials
Applications
- Load Switch
- Power Management Functions
- Portable Power Adaptors
Procurement Notes
Verify the specific ordering suffix when purchasing. The suffix '-7' indicates a tape and reel packaging quantity of 3000 units per reel. The suffix '-13' corresponds to a larger tape and reel quantity of 10000 units. Confirm that the required packaging format aligns with the manufacturing process before placing orders to ensure compatibility with automated assembly equipment.
Selection Notes
Select this component for designs requiring low on-state resistance combined with superior switching performance in compact form factors. The dual channel architecture allows for independent control or parallel operation to increase current handling capability. Ensure the application voltage does not exceed the -12V drain-source rating and verify thermal dissipation requirements against the specified junction-to-ambient thermal resistance values.
Part Context
This part belongs to the DMP series of dual P-channel enhancement mode MOSFETs produced by Diodes Incorporated. It is housed in a U-DFN2020-6 Type B case, which provides a small footprint suitable for space-constrained portable electronics. The device is qualified to JEDEC standards for high reliability and is intended for general-purpose power management tasks where size and efficiency are critical design constraints.
Replacement Considerations
Direct substitutes include other dual P-channel MOSFETs in the U-DFN2020-6 package with similar voltage and current ratings. Verify pinout compatibility and electrical parameters such as RDS(ON) and gate threshold voltage before substitution. Consult the manufacturer's automotive grade listings if AEC-Q qualification is required for the target application.
FAQ
What is the maximum height of the DMP1055UFDB-7 package?
The maximum height of the U-DFN2020-6 package is 0.6mm.
Is the gate of the DMP1055UFDB-7 protected against electrostatic discharge?
Yes, the device features an ESD protected gate structure.
What is the typical total gate charge at VGS = -4.5V?
The typical total gate charge is 13nC when tested at VDS = -10V and ID = -4.7A.
