DMP1055USW-7

$0.44

Description：MOSFET P-CH 12V 3.8A SOT363
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0b24eeb25599 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 12V 3.8A SOT363
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：48mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：1028 pF @ 6 V
FET Feature：-
Power Dissipation (Max)：660mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-363
Package / Case：6-TSSOP, SC-88, SOT-363

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DMP1055USW-7

Overview

The DMP1055USW-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in an SOT363 surface-mount package. It features a drain-source voltage rating of -12V and a maximum continuous drain current of -3.8A at +25°C. The device offers low on-state resistance, specified as 48mΩ maximum at VGS = -4.5V and ID = -3.0A. Designed for high-efficiency power management, it combines superior switching performance with compact physical dimensions.

Feature Summary

Low on-resistance for efficient power handling
Low gate threshold voltage for easy drive compatibility
Fast switching speed with low input capacitance
ESD protected design within a small surface mount package

Applications

DC-DC Converters
Power Management Functions
Battery Operated Systems
Solid-State Relays
Drivers for Relays, Solenoids, Lamps, and Displays

Procurement Notes

Verify the specific ordering suffix to confirm packaging quantity. The -7 suffix indicates a tape and reel quantity of 3,000 units, while the -13 suffix denotes 10,000 units per reel. Ensure the selected variant matches the required production volume and automated placement equipment specifications before finalizing procurement.

Selection Notes

Select this component for applications requiring a compact P-channel switch with a -12V breakdown voltage. It is suitable for battery-operated systems where low gate drive requirements and fast switching are critical. Consider the thermal characteristics and package size when designing for space-constrained PCB layouts.

Part Context

This part belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. These devices are engineered to minimize on-state resistance while maintaining excellent switching performance. The SOT363 package provides a highly compact solution for modern electronic designs requiring efficient power control in limited board areas.

Replacement Considerations

Direct substitutes must match the -12V rating, P-channel type, and SOT363 footprint. Verify that alternative components meet or exceed the 48mΩ RDS(ON) specification at -4.5V gate drive and maintain compatible pinout configurations for seamless integration.