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Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V SOT23 T&R 1
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：5.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：31mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.5 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：143 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：890mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMP1070U-13 is a P-channel enhancement mode MOSFET in an SOT23 package. It features a drain-source voltage (V_DSS) of -12 V and a gate-source voltage (V_GSS) of ±8 V. The maximum continuous drain current (I_D) is -5.4 A at +25°C, with a pulsed drain current (I_DM) of -33 A. Static drain-source on-resistance (R_DS(on)) is 31 mΩ max at V_GS = -4.5 V and 45 mΩ max at V_GS = -2.5 V. Total power dissipation is 0.89 W to 1.4 W depending on mounting conditions. Operating temperature range is -55°C to +150°C.
Feature Summary
- Low on-state resistance for high-efficiency power management
- Fast switching speed with low input capacitance
- ESD protected gate structure
- Totally lead-free and fully RoHS compliant
Applications
- DC-DC converters
- Power management functions
- Analog switches
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets Halogen- and Antimony-free 'Green' device requirements if environmental compliance is mandatory for the target application.
Selection Notes
Select this component when a compact SOT23 footprint is required for low-voltage (-12 V) P-channel switching applications. Ensure the design accommodates the specified thermal resistance values and that the gate drive voltage aligns with the R_DS(on) performance curves for optimal efficiency.
Part Context
This part belongs to Diodes Incorporated's advanced generation of P-channel MOSFETs designed to minimize on-state resistance while maintaining superior switching performance. It utilizes a molded plastic case material with a matte tin annealed finish over a copper lead-frame, suitable for surface-mount assembly on FR-4 substrates.
Replacement Considerations
Cross-reference with other Diodes P-channel MOSFETs in the SOT23 package offering similar -12 V ratings. Verify that substitute parts match or exceed the required -5.4 A continuous current capability and maintain comparable R_DS(on) specifications at the intended gate drive voltages.
FAQ
What is the maximum continuous body diode forward current?
The maximum continuous body diode forward current (I_S) is -1.8 A.
How does the total power dissipation change based on board layout?
Total power dissipation is rated at 0.89 W on a standard FR-4 substrate with minimum recommended pad layout, and increases to 1.4 W when mounted on a 1-inch square copper plate.
