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Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V SOT23 T&R 3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：5.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：31mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.5 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：143 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：890mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Download product information
Overview
The DMP1070U-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT23 surface-mount package. It features a drain-source breakdown voltage (BVDSS) of -12V and a maximum continuous drain current (ID) of -5.4A at +25°C. The device exhibits a low on-state resistance (RDS(on)) of 31mΩ at VGS = -4.5V and 45mΩ at VGS = -2.5V. Total gate charge (QG) is 11.5nC, with input capacitance (Ciss) of 143pF. Operating temperature range spans from -55°C to +150°C junction temperature.
Feature Summary
- Designed for high-efficiency power management applications through minimized on-state resistance while maintaining superior switching performance.
- Features ESD protected gates and low input/output leakage characteristics.
- Totally lead-free and fully RoHS compliant, also halogen- and antimony-free.
Applications
- DC-DC Converters
- Power Management Functions
- Analog Switch
Procurement Notes
Verify the specific ordering suffix against official documentation before procurement. The '-7' suffix indicates a 3,000-unit tape and reel packaging format. Confirm that the required electrical parameters align with the design specifications, particularly the -12V drain-source voltage rating and the thermal dissipation limits under the intended operating conditions.
Selection Notes
Select this component when a compact P-channel MOSFET with low RDS(on) is required for space-constrained designs. The SOT23 package offers a small footprint suitable for dense PCB layouts. Ensure the application voltage does not exceed the -12V BVDSS limit and consider the thermal resistance values if operating near the maximum temperature ratings.
Part Context
This part belongs to the DMP series of P-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to provide low on-resistance and fast switching speeds, making them suitable for modern power management solutions. The DMP1070U specifically targets applications requiring efficient power handling in a minimal physical profile.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided datasheet.
FAQ
What is the maximum continuous drain current for the DMP1070U?
The maximum continuous drain current is -5.4A at an ambient temperature of +25°C and -4.3A at +70°C.
Is the DMP1070U suitable for automotive applications?
For automotive applications requiring specific change control, parts qualified to AEC-Q100/101/200 and PPAP capable, customers must contact Diodes Incorporated or their local representative directly.
