DMP1070UQ-13

Description：MOSFET BVDSS: 8V~24V SOT23 T&R 1
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:57b6957eeca1 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 8V~24V SOT23 T&R 1
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：31mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.5 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：143 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：890mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMP1070UQ-13

Overview

The DMP1070UQ is a P-channel enhancement mode MOSFET designed for high-efficiency power management. It features a -12V drain-source breakdown voltage and low on-state resistance of 31mΩ at VGS = -4.5V, or 45mΩ at VGS = -2.5V. The device supports a continuous drain current of -5.4A at +25°C. Packaged in an SOT23 case, it includes internal gate protection diodes and meets AEC-Q101 automotive qualification standards.

Feature Summary

Low on-resistance design minimizes conduction losses while maintaining superior switching performance.
Internal gate protection diode provides ESD protection and safeguards against gate overvoltage.
Qualified for automotive applications with PPAP capability and manufacturing in IATF 16949 certified facilities.

Applications

DC-DC Converters
Power Management Functions
Analog Switch

Procurement Notes

Verify the specific ordering suffix to confirm packaging quantity. The DMP1070UQ-13 variant is supplied in tape and reel packaging containing 10,000 units per reel. Confirm that the selected part number matches the required logistics configuration for your assembly line before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring a compact P-channel switch with a -12V rating. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance. Verify thermal constraints based on the junction-to-ambient resistance values provided in the datasheet for your specific PCB layout.

Part Context

This device belongs to Diodes Incorporated's advanced generation MOSFET portfolio, specifically engineered to balance low static resistance with dynamic switching efficiency. The product line targets modern power management systems where space constraints and energy efficiency are critical design parameters.

Replacement Considerations

Direct substitutes include the DMP1070UFY4Q-7, which shares similar electrical characteristics but utilizes an X2-DFN2015-3 package instead of the SOT23 form factor. Evaluate pinout compatibility and thermal dissipation differences when considering alternative packages within the same family.