DMP1200UFR4-7

$0.45

Description：MOSFET P-CH 12V 2A X2-DFN1010-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c021eee4acc5 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 12V 2A X2-DFN1010-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：100mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：5.8 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：514 pF @ 5 V
FET Feature：-
Power Dissipation (Max)：480mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN1010-3
Package / Case：3-XFDFN

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DMP1200UFR4-7

Overview

The DMP1200UFR4 is a P-channel enhancement mode MOSFET designed for high-efficiency power management. It features a -12V drain-source voltage rating and a continuous drain current of -2A at +25°C. The device offers low on-state resistance, specified as 100mΩ maximum at VGS = -4.5V and ID = -2A. It utilizes an X2-DFN1010-3 surface-mount package with NiPdAu annealed terminals over a copper leadframe.

Feature Summary

Low on-resistance design to minimize conduction losses
ESD protected gate structure
Fast switching speed capabilities
Totally lead-free and fully RoHS compliant

Applications

Power management functions
Backlighting circuits
Load switch applications

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the component meets the required halogen and antimony-free green device standards if environmental compliance is mandatory for the target application.

Selection Notes

Select this component for applications requiring a compact P-channel MOSFET with a -12V breakdown voltage. Ensure the driving circuit can provide sufficient gate-source voltage to achieve the desired on-resistance levels. Consider the thermal resistance characteristics when designing the PCB layout for adequate heat dissipation.

Part Context

This part belongs to Diodes Incorporated's new generation MOSFET lineup, engineered to balance low on-state resistance with superior switching performance. It is housed in the X2-DFN1010-3 case, utilizing a molded plastic green molding compound with a UL flammability classification rating of 94V-0.