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The DMP2004VK-7 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a SOT563 case with a maximum drain-source voltage of -20V and a gate-source voltage rating of ±8V. The device provides a continuous drain current of -0.53A at +25°C when VGS is -4.5V, or -0.44A at +25°C when VGS is -2.5V. Maximum static drain-source on-resistance is 0.9Ω at VGS = -4.5V and 1.4Ω at VGS = -2.5V. Total power dissipation is 400mW with a thermal resistance junction-to-ambient of 312°C/W. Operating temperature ranges from -65°C to +150°C.
Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging format containing 3,000 units per reel. Confirm that the component utilizes the SOT563 case style as specified in the official datasheet documentation. Ensure compliance with RoHS and lead-free requirements during procurement validation.
Select this component for applications requiring dual independent P-channel switches within a minimal footprint. Evaluate the thermal constraints carefully due to the 312°C/W junction-to-ambient resistance. Verify that the required drive voltage aligns with the specified on-resistance characteristics at either -4.5V or -2.5V gate-source levels.
This part belongs to the DMP2004 series of dual P-channel enhancement mode MOSFETs. It is designed to minimize on-state resistance while maintaining superior switching performance. The device is intended for use in high-efficiency power management applications where space is limited and multiple switch channels are required.
Direct substitutes include other dual P-channel MOSFETs in the SOT563 package with matching -20V ratings. Verify pinout compatibility and ensure equivalent on-resistance values at the target operating voltages before implementation.
The maximum continuous drain current is -0.53A at VGS = -4.5V and -0.44A at VGS = -2.5V.
Yes, the gates are ESD protected, and each channel includes an integrated body diode.
The maximum input capacitance (Ciss) is 175 pF at VDS = -16V and VGS = 0V.