DMP2006UFG-7

Description：MOSFET P-CH 20V 17.5A POWERDI
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:fc3b66fa2790 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 17.5A POWERDI
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：17.5A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：5.2mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：140 nC @ 10 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：5404 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：2.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMP2006UFG-7

Overview

The DMP2006UFG-7 is a single-channel P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in an 8-pin PowerDI3333 surface-mount package. The device features a drain-source breakdown voltage of 20 V and supports a continuous drain current of up to 40 A at case temperature, with a typical rating of 17.5 A at ambient temperature. Key electrical parameters include a maximum on-resistance of 5.5 mΩ at a gate-source voltage of -4.5 V, a gate charge of 72 nC, and a power dissipation capacity of 41 W. It operates within a temperature range of -55°C to +150°C.

Feature Summary

Low on-resistance for high efficiency
Compact PowerDI3333 footprint
High thermal performance

Applications

High-performance point-of-load converters
Server and communication equipment power stages
Battery protection circuits

Procurement Notes

Verify the specific suffix against official Diodes Incorporated documentation to confirm exact binning or tape-and-reel specifications. Ensure the component meets RoHS compliance requirements for your target market. Cross-reference the datasheet revision date to validate parameter accuracy before finalizing procurement orders.

Selection Notes

Select this component for applications requiring low conduction losses in compact spaces. Evaluate thermal management strategies given the 41 W dissipation rating. Confirm that the driving circuit can provide sufficient negative gate voltage to fully enhance the channel and minimize resistance.

Part Context

This part belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. The series focuses on providing robust switching capabilities in small form factors suitable for modern electronic designs. The PowerDI packaging family offers improved thermal characteristics compared to traditional SMD packages.