ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：9.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：15mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 8 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：1710 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：900mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type E)
- Package / Case：6-PowerUDFN
Download product information
Overview
The DMP2016UFDE-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source breakdown voltage and a maximum continuous drain current of -9.5A at +25°C. The device offers a low on-resistance of 15mΩ at VGS = -4.5V and 19mΩ at VGS = -2.5V. Packaged in a U-DFN2020-6 (Type E) footprint, it supports a total power dissipation of 0.9W at +25°C with a junction temperature range of -55°C to +150°C.
Feature Summary
- Designed for high-efficiency power management applications through minimized on-state resistance while maintaining superior switching performance.
- Features a 0.6mm profile ideal for low-profile applications and a compact PCB footprint of 4mm².
- Includes an ESD-protected gate structure and utilizes a totally lead-free, fully RoHS compliant manufacturing process.
Applications
- Battery-management systems
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix to confirm packaging quantity and carrier type. The DMP2016UFDE-7 variant is supplied in tape and reel packaging with a standard quantity of 3,000 units per reel. Confirm that the required component meets all applicable environmental directives and quality standards relevant to the target deployment environment before finalizing procurement.
Selection Notes
Select this component when a low-voltage P-channel switch is required for space-constrained designs. The U-DFN2020-6 package provides a minimal board area requirement suitable for dense layouts. Ensure the application gate drive voltage aligns with the specified thresholds to achieve the optimal on-resistance characteristics defined in the electrical data.
Part Context
This part belongs to the DMP series of P-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to balance low conduction losses with fast switching speeds. The series targets portable electronics and power management circuits where efficiency and physical size are critical design constraints.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing requires matching key electrical parameters such as voltage ratings, current capacity, and package dimensions to ensure functional compatibility within the existing circuit design.
FAQ
What is the maximum pulsed drain current rating?
The maximum pulsed drain current is rated at -70A, based on a 10μs pulse duration with a 1% duty cycle.
Is the device qualified for automotive applications?
For automotive applications requiring specific change control, AEC-Q100/101/104/200 qualification, PPAP capability, or IATF 16949 certified manufacturing, customers must contact Diodes Incorporated directly.
