DMP2021UFDF-7

$0.89

Description：MOSFET P-CH 20V 9A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:423b76a6b9ac Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 9A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：16mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：59 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：2760 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：730mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMP2021UFDF-7

Overview

The DMP2021UFDF-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 package with a maximum height of 0.6mm and a PCB footprint of 4mm². The device offers a drain-source breakdown voltage (V(BR)DSS) of -20V and a continuous drain current (ID) of -9.0A at +25°C. Static drain-source on-resistance (RDS(ON)) is specified as 16mΩ max at VGS = -4.5V and 22mΩ max at VGS = -2.5V. It includes an ESD protected gate, operates within a junction temperature range of -55°C to +150°C, and is fully RoHS compliant.

Feature Summary

Designed for high-efficiency power management applications with minimized on-state resistance and superior switching performance.
Features a low profile construction ideal for space-constrained designs.
Includes an ESD protected gate structure for enhanced reliability.

Applications

Battery Management Systems
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm compliance requirements such as RoHS status and halogen-free definitions prior to procurement. Ensure the selected variant matches the required thermal and electrical ratings for the target application environment.

Selection Notes

Select this component based on the required -20V breakdown voltage and the necessary current handling capabilities for the load. Evaluate the RDS(ON) values at the intended gate drive voltages to ensure efficiency targets are met. Consider the U-DFN2020-6 package dimensions and thermal characteristics when designing the PCB layout for optimal heat dissipation.

Part Context

This part belongs to the DMP series of P-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to balance low conduction losses with fast switching speeds. The series utilizes advanced silicon processes to achieve high performance in compact surface-mount packages suitable for modern electronic equipment.

Replacement Considerations

Consult official manufacturer documentation for qualified automotive grade alternatives if AEC-Q100/101/200 qualification or PPAP capability is required. Verify pinout compatibility and electrical parameters before substituting with other P-channel MOSFETs.