DMP2022LSS-13

$0.80

Description：MOSFET P-CH 20V 10A 8SOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b8e4b03b26e9 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 10A 8SOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：56.9 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：2444 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

Download product information

DMP2022LSS-13

Overview

The DMP2022LSS-13 is a single P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a SO-8 surface-mount package and operates with a drain-source voltage of -20 V and a continuous drain current of -10 A at +25°C. The device exhibits low on-resistance, specified as 13 mΩ at VGS = -10V and 16 mΩ at VGS = -4.5V. It includes an internal body diode with a forward voltage of -0.68 V typical. Thermal resistance from junction to ambient is rated at 50 °C/W, supporting a total power dissipation of 2.5 W.

Feature Summary

Low static drain-source on-resistance across multiple gate drive voltages
Fast switching speed combined with low input capacitance
Qualified to AEC-Q101 standards for high reliability applications

Applications

Automotive electronic systems requiring high reliability components
Power management circuits utilizing P-channel switching
Load switch implementations in portable devices

Procurement Notes

Verify the specific datasheet revision (DS31373 Rev. 6) matches your design requirements. Confirm that the SO-8 package dimensions align with your PCB footprint layout. Ensure thermal management strategies account for the 50 °C/W junction-to-ambient resistance rating under expected operating conditions. Check for compliance with RoHS and halogen-free specifications if required by your manufacturing process.

Selection Notes

Select this component when a P-channel MOSFET with a -20 V breakdown voltage is required. Consider the low gate threshold voltage for compatibility with lower logic levels. Evaluate the thermal performance against your system's ambient temperature constraints. Compare the on-resistance values at your specific gate drive voltage to ensure efficiency targets are met.

Part Context

This part belongs to the DMP2022 series of single P-channel enhancement mode MOSFETs. It is designed for general-purpose switching applications where low on-resistance and fast switching are critical. The SO-8 package provides a compact solution for surface-mount assembly. The device is distinct from automotive-qualified variants which may carry separate ordering suffixes or documentation.