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Product Detailed Parameters
- Description：MOSFET P-CH 20V 7.6A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：7.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：27mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：27 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：1837 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：730mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMP2023UFDF-13 is a surface-mount P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source voltage rating and a maximum continuous drain current of -7.6A at +25°C. The device offers low on-state resistance, specified as 27mΩ at VGS = -4.5V and ID = -7.0A. It operates within a junction temperature range of -55°C to +150°C and utilizes a U-DFN2020-6 (Type F) package with a 0.6mm profile.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
- Features a 0.6mm profile and a compact PCB footprint of 4mm², making it suitable for low-profile applications.
- Incorporates a low gate threshold voltage and fast switching speed characteristics.
Applications
- Battery management systems
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit reel packing quantity as defined in the manufacturer's ordering information. Confirm that the component meets RoHS, REACH, and halogen-free requirements if mandated by your assembly specifications. Ensure the selected variant matches the required thermal and electrical ratings for your target application environment.
Selection Notes
Select this component when a small form factor is critical due to its U-DFN2020-6 package dimensions. Evaluate the thermal resistance values against your board layout copper area, as power dissipation capabilities vary significantly between minimum pad layouts and larger heat-sinking configurations. Consider the gate threshold voltage limits to ensure compatibility with your logic drive levels.
Part Context
This part belongs to the Diodes Incorporated P-channel MOSFET family, specifically engineered for low-voltage applications. It shares the U-DFN2020-6 mechanical outline with other devices in the series but is distinguished by its specific electrical parameters, including the -20V breakdown voltage and optimized on-resistance characteristics for efficient power switching.
Replacement Considerations
Consult the official datasheet or contact Diodes Incorporated directly for confirmed substitute part numbers. Do not assume cross-compatibility with other manufacturers' components without verifying pinout, electrical ratings, and thermal performance equivalence.
FAQ
What is the maximum continuous drain current rating?
The maximum continuous drain current is -7.6A at an ambient temperature of +25°C.
Does the device support automotive applications?
For automotive applications requiring AEC-Q100/101/104/200 qualification and PPAP capability, customers must contact Diodes Incorporated or their local representative directly.
