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Product Detailed Parameters
- Description：MOSFET P-CH 20V 8.1A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：8.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：29mOhm @ 6.4A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20.5 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：1808 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.03W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMP2035UFDF-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, designed for high-efficiency power management. It features a -20V drain-source voltage (BVDSS) and a maximum continuous drain current of -6.9A at +25°C. The device offers low on-resistance, specified as 29mΩ max at VGS = -4.5V and 39mΩ max at VGS = -2.5V. Packaged in a U-DFN2020-6 (Type F) surface-mount case with a 0.6mm profile, it supports an operating temperature range of -55°C to +150°C.
Feature Summary
- Low on-state resistance optimized for high efficiency
- Integrated ESD protection on the gate terminal
- Totally lead-free and fully RoHS compliant construction
Applications
- Battery Management Systems
- DC-DC Converters
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the component meets all required environmental standards and quality certifications relevant to the target application before finalizing procurement decisions.
Selection Notes
Select this component based on its low on-resistance characteristics and compact U-DFN2020-6 footprint suitable for space-constrained designs. Ensure the gate drive voltage aligns with the specified thresholds for optimal performance and verify thermal requirements against the provided junction-to-ambient resistance data.
Part Context
This part belongs to the DMP series of P-channel MOSFETs manufactured by Diodes Incorporated. It utilizes a U-DFN2020-6 package type, which provides a small PCB footprint of 4mm². The device is qualified to JEDEC standards for high reliability and is halogen and antimony free.
Replacement Considerations
For automotive applications requiring specific change control or AEC-Q qualification, consult the related automotive grade parts with Q-suffixes listed on the manufacturer's website.
