DMP2035UTS-13

Overview

The DMP2035UTS-13 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSSOP-8L package with a drain-source voltage (V_DSS) of -20 V and a gate-source voltage (V_GSS) rating of ±8 V. The device supports a continuous drain current (I_D) of 6.04 A at 25°C ambient temperature, reducing to 3.96 A at 85°C. Maximum power dissipation is 0.89 W, with a thermal resistance from junction to ambient of 142.7 °C/W. The operating and storage temperature range spans from -55°C to +150°C.

Feature Summary

• Dual P-channel configuration in a single compact package
• Low on-resistance for efficient power switching
• Fast switching speed with low input capacitance
• ESD protection up to 3kV

Applications

• General purpose AC switching applications
• Power management circuits requiring dual channel control
• Automotive electronics due to AEC-Q101 qualification

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging format as documented in the manufacturer's ordering information section. Confirm that the component meets RoHS compliance standards and lead-free design requirements specified in the datasheet notes before finalizing procurement specifications.

Selection Notes

Select this component when a dual P-channel solution is required within a TSSOP-8L footprint. Ensure the application operates within the -20 V drain-source voltage limit and respects the continuous current derating curve above 25°C ambient temperature. Verify that the thermal management strategy accommodates the 142.7 °C/W junction-to-ambient thermal resistance for steady-state operations.

Part Context

This part belongs to the DMP2035U series of dual P-channel MOSFETs from Diodes Incorporated. It is designed for high-reliability applications, having been qualified to AEC-Q101 standards. The device utilizes a molded plastic case material classified as UL 94V-0 flammability rated, ensuring safety in various electronic assemblies.

Replacement Considerations

Direct replacements must match the dual P-channel topology, -20 V rating, and TSSOP-8L package. Verify pinout compatibility, specifically the shared source connections and individual gate/drain assignments, to ensure seamless integration without circuit redesign.

FAQ

What is the maximum pulsed drain current for the DMP2035UTS?

The maximum pulsed drain current (I_DM) is rated at 22 A, limited by the junction temperature.

Is the DMP2035UTS suitable for automotive applications?

Yes, the device is qualified to AEC-Q101 standards for high reliability, making it suitable for automotive electronics.

What is the typical gate threshold voltage range?

The gate threshold voltage (V_GS(th)) ranges from -0.4 V to -1.0 V when tested at a drain current of -250µA.