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The DMP2035UVT-13 is a -20V P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSOT26 package and offers a maximum on-resistance of 35mΩ at VGS = -4.5V with a continuous drain current of -6.0A at +25°C. The device supports a gate-source voltage of ±12V, operates within a junction temperature range of -55°C to +150°C, and includes an internal body diode.
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets AEC-Q101 standards if automotive reliability requirements are necessary for the intended application environment.
Select this component when low on-resistance and fast switching are required in a compact TSOT26 footprint. Ensure the design accommodates the -20V drain-source voltage limit and verify thermal management capabilities for the specified power dissipation levels under steady-state conditions.
This part belongs to the DMP2035UVT series of P-channel MOSFETs from Diodes Incorporated. It utilizes a TSOT26 case material made of molded plastic with a UL 94V-0 flammability rating. The device is lead-free, fully RoHS compliant, and halogen/antimony free.
Consult official manufacturer documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on similar electrical ratings or package types without confirming pinout and thermal characteristics.
The maximum gate-source voltage (VGSS) is rated at ±12V.
Yes, the DMP2035UVT is qualified to AEC-Q101 standards for high reliability.