DMP2035UVT-13

DMP2035UVT-13

  • Description:MOSFET P-CH 20V 7.2A TSOT26
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)

SKU:cbebb8efe9f7 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET P-CH 20V 7.2A TSOT26
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:7.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs:35mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:23.1 nC @ 4.5 V
  • Vgs (Max):±12V
  • Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):2W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:TSOT-26
  • Package / Case:SOT-23-6 Thin, TSOT-23-6

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DMP2035UVT-13

Overview

The DMP2035UVT-13 is a -20V P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSOT26 package and offers a maximum on-resistance of 35mΩ at VGS = -4.5V with a continuous drain current of -6.0A at +25°C. The device supports a gate-source voltage of ±12V, operates within a junction temperature range of -55°C to +150°C, and includes an internal body diode.

Feature Summary

  • Low input capacitance for efficient switching
  • Low on-state resistance (RDS(ON))
  • Fast switching speed performance
  • ESD protection up to 3kV

Applications

  • DC-DC Converters
  • Motor Control
  • Power Management Functions
  • Analog Switch

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets AEC-Q101 standards if automotive reliability requirements are necessary for the intended application environment.

Selection Notes

Select this component when low on-resistance and fast switching are required in a compact TSOT26 footprint. Ensure the design accommodates the -20V drain-source voltage limit and verify thermal management capabilities for the specified power dissipation levels under steady-state conditions.

Part Context

This part belongs to the DMP2035UVT series of P-channel MOSFETs from Diodes Incorporated. It utilizes a TSOT26 case material made of molded plastic with a UL 94V-0 flammability rating. The device is lead-free, fully RoHS compliant, and halogen/antimony free.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on similar electrical ratings or package types without confirming pinout and thermal characteristics.

FAQ

What is the maximum gate-source voltage rating?

The maximum gate-source voltage (VGSS) is rated at ±12V.

Is the device qualified for high-reliability applications?

Yes, the DMP2035UVT is qualified to AEC-Q101 standards for high reliability.

DMP2035UVT-13DMP2035UVT-13

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