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Product Detailed Parameters
- Description：MOSFET P-CH 20V 7.2A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：7.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：35mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：23.1 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：2400 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TSOT-23-6
- Package / Case：SOT-23-6 Thin, TSOT-23-6
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Overview
The DMP2035UVTQ-13 is a 20V P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source breakdown voltage of -20V and a continuous drain current of -6.0A at +25°C with VGS = -4.5V. The device exhibits a maximum on-resistance of 35mΩ at VGS = -4.5V and 45mΩ at VGS = -2.5V. Packaged in a TSOT26 case, it supports an operating temperature range from -55°C to +150°C.
Feature Summary
- Qualified to AEC-Q101 standards for high reliability
- ESD protected up to 3kV
- Low input capacitance and fast switching speed
- Totally lead-free and fully RoHS compliant
Applications
- DC-DC Converters
- Motor Control
- Power management functions
- Analog Switch
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets automotive PPAP requirements if intended for such applications. Ensure the TSOT26 package dimensions align with the target PCB layout constraints before finalizing procurement.
Selection Notes
Select this component for designs requiring a 20V P-channel switch with low on-resistance. The TSOT26 package provides a compact footprint suitable for space-constrained layouts. Consider the thermal resistance characteristics when determining heat dissipation needs for steady-state versus pulsed operation scenarios.
Part Context
This part belongs to Diodes Incorporated's new generation MOSFET lineup designed to minimize on-state resistance while maintaining superior switching performance. It is specifically engineered for high-efficiency power management applications where low conduction losses and fast switching are critical design parameters.
Replacement Considerations
The DMP2035UVTQ-7 is a direct substitute offering identical electrical specifications but packaged in a 3,000-unit tape and reel format instead of the 10,000-unit configuration.
