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The DMP2035UVTQ-7 is a P-channel enhancement mode MOSFET in a TSOT26 package. It features a -20V drain-source voltage and a maximum continuous drain current of -6.0A at +25°C with VGS=-4.5V. The on-resistance is 35mΩ max at VGS=-4.5V and 45mΩ max at VGS=-2.5V, both at ID=-4.0A. Total gate charge is 15.4nC typ at VDS=-10V, VGS=-4.5V, and ID=-4A. Input capacitance is 1610pF typ at VDS=-10V. Operating temperature range is -55°C to +150°C.
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging quantity and reel specifications. Confirm that the component meets all required automotive qualification standards if intended for such applications. Ensure compatibility with the target PCB footprint dimensions for the TSOT26 case style before finalizing procurement.
Select this component for designs requiring low on-resistance and fast switching performance in power management circuits. Consider the thermal resistance characteristics when determining heat dissipation requirements. Verify that the gate drive voltage levels align with the specified threshold and on-resistance test conditions for optimal efficiency.
This part belongs to the DMP2035UVTQ series of P-channel MOSFETs manufactured by Diodes Incorporated. It utilizes a TSOT26 surface-mount case style designed for compact electronic assemblies. The device is engineered to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.
Consult official manufacturer substitution guides for verified alternatives. Cross-reference electrical parameters such as voltage ratings, current capabilities, and package dimensions to ensure functional equivalence without compromising circuit performance or safety margins.
The maximum continuous drain current is -6.0A at TA = +25°C with VGS = -4.5V.
Yes, the device is qualified to AEC-Q101 standards for high reliability and is PPAP capable.
The typical total gate charge is 15.4nC at VDS = -10V, VGS = -4.5V, and ID = -4A.